impurity density
英 [ɪmˈpjʊərəti ˈdensəti]
美 [ɪmˈpjʊrəti ˈdensəti]
网络 杂质浓度
双语例句
- The results show that the damaged layer of silicon cut by WEDM mainly appears massive impurity elements, remelted and elastic distortion with a high density dislocation.
结果表明：电火花线切割单晶硅损伤层主要由杂质元素重污染层、重熔层和含有高密度位错的弹性畸变层组成； - Removing process of light and soft impurity that is medium and low density is introduced.
介绍了煤中低密度轻软杂质清除的工艺过程。 - Relationship Discussion of Raw Cotton Impurity Content Tested by HVI and Traditional Instrument Dry Material Accumulation and Dynamic Distribution of Xiang za 8th Under Different Density
HVI检验与传统机检原棉杂质关系的探讨不同密度下湘杂棉8号干物质积累及动态分配 - And the lattice strain distribution were compared with the impurity density distribution, the result indicates that the lattice strain distribution curve of N2+/ As+ compound ion implanted Si has a peak between two peaks of the impurity density distribution curve near the left peak.
结果表明N2~+/As~+组合离子注入单晶Si的应变分布曲线为单峰，位于杂质浓度分布曲线的双峰之间，靠近重离子峰。 - The experimental results show that there is a corresponding relationship between distribution of C impurity and dislocation density in wafer.
其结果表明：碳的微区分布与晶片中位错密度及分布存在对应关系。 - The influence of various factors such as preparation methods, condition of chemical treatment, size of particles, surface modification and impurity admixture on density of free-radicals of nano-condensed carbon and nano-diamond were also discussed.
探讨了制备方法、化学处理条件、粒径大小、表面改性及掺杂对纳米碳集聚体和纳米金刚石的自由基密度的影响。 - An ideal impurity transport code has been used to simulate impurities ( carbon and oxygen) behaviour during the OH discharge. The profiles of impurities diffusion and convection coefficient, impurities ion densities in different ionized state, loss power density and effective charge number have been derived.
建立完备的杂质输运程序，数值模拟碳、氧杂质在欧姆放电时的输运行为，得出了杂质的扩散和对流系数、不同电离态杂质离子密度、辐射功率密度和有效电荷数的空间分布。 - Increasing the boundary density can reduce the segregation of impurity atoms and the distribution inhomogeneity of current density. Therefore, it is possible to increase the specific capacity by means of reducing the grain size under some electrochemistry corrosion conditions.
增加晶界密度可以降低杂质原子偏聚程度和电流密度分布的不均匀性，因此在一些特定的电化学腐蚀条件下可以借助减小晶粒尺寸的方式提高比电容。 - Shallow ion implantation modulates surface impurity density for modulating threshold voltage.
浅离子注入调节表面掺杂浓度以达到调整阈值电压的目的。 - Impurity Effect on Density of States of Metal Semiconductor Interface
杂质对金属-半导体界面电子态的影响 - The radiated power of impurity ions varying with time and electron temperature for given the profiles of electron temperature and density is calculated, and the corresponding physics is discussed.
在给定电子温度和密度剖面下，给出了杂质离子辐射率随时间和电子温度变化的计算结果，并讨论了相关物理过程。 - To decrease the contamination of heavy metal impurity the dislocation density of SIMOX material should be decreased first.
要降低重金属杂质的沾污首先必须降低SIMOX材料的位错密度。 - In order to get the constant Gamma C-V characteristic, the epitaxial impurity density should be distributed with a power function.
为了获得常γC&V特性，外延层掺杂浓度分布应为幂函数。 - This report presents the experimental researcg at different tempera-ture and densities about the influence of impurity on radiation at spectral and integral radiation on air equilibrium radiation by using the radiometer in the low density shock tube.
本文利用低密度激波管和辐射计，在不同的温度和密度状态下，就杂质辐射在分谱和累积辐射条件下对高温空气平衡辐射的影响进行的实验研究； - Damage Annealing and Impurity Density Distribution of As~+/ N_2~+ Co-Implantation Si
As~+/N2~+组合离子注入Si的损伤退火及杂质浓度分布 - A simple single impurity band spin-fermi lattice model is discussed using Monte Carlo simulations. The density of states and optical conductivity are calculated.
本文的第三部分讨论了单杂质能带自旋-费米格点模型，利用MonteCarlo方法计算了系统的态密度和光学电导。 - The Green's function method within tight-bonding approximation is used to investigate the effects of substitutional impurity atom in metal on the Pt-Si interface electronic density of states ( DOS).
用一维紧束缚近似和格林函数方法研究了金属中的替位杂质对金属Pt与半导体Si所形成界面电子态的影响。 - The results of the molecular beam injection show that the impurity have been decreased, the electron density have been increases, and the plasma confinement property was improved.
分子束注入减小了杂质辐射，有效地提高了电子密度，改善了等离子体的约束性能。 - In this study, the separating object was iron-rich impurity particles in Al-Si alloy and dynamic experiments had been done to study the effect of magnetic flux density, cross shape of separator channel and circle size of metal melt no separating efficiency.
文中以铝硅合金中的富铁相杂质颗粒为分离对象，利用流动试验研究了磁感应强度、分离通道截面形状和金属熔体回路尺寸对分离效率的影响。 - During the impurity radiation, the density perturbation driven by density gradient couples with the temperature one and then affects the electrostatic potential one.
电子密度梯度直接影响密度涨落，并通过杂质辐射与温度涨落相互耦合，进而影响静电势涨落。 - Boron is the primary impurity in semiconductor material, and accurately controling impurity density of section is one of the key questions in semiconductor-technics.
硼是半导体材料中最主要的杂质，而精确控制杂质浓度剖面是半导体工艺的关键问题之一。 - In this paper, we suggest positive or negative exponential model in which n/ n+ or p/ p+ Si epitaxial layer impurity charge density p changes with x ( n-2).
提出了n/n~+或p/p~+硅外延层电荷密度ρ随x~（n-2）方式变化的正、负指数分布模型。 - The results show that the effectiveness of removing impurity under continuous process is a bit lower than that under motionlessness, and the density difference has a little influence on the effectiveness of removing.
结果表明，熔体连续处理条件下的夹杂物去除效率比熔体静止时的略低，而夹杂物与熔体之间的密度差对电磁分离时的去除效率影响不大。 - The influences of nonmetal impurity contents, the surface area, the bulk density, the particle size distribution, the shape and the strength of the agglomerated tantalum powder and storaging time of the powder on the crush strength of pressed pellets were studied.
研究了钽粉中非金属杂质的含量、钽粉的比表面积、存放时间、松装密度、钽粉粒度分布、颗粒形状及颗粒强度对生坯强度的影响。 - Concurrently, impurity band can increase the density of states at the Fermi level and hence enlarge the Seebeck coefficient.
另外杂质能带可以增加费米能级处的态密度，增大Seebeck系数。 - The results show that lifetime of the spin helix is not divergent, and it is closely dependent on the strength of the extrinsic SOC and the impurity density.
结果表明考虑外禀自旋-轨道耦合作用后，自旋螺旋态的寿命不再是无穷大，且自旋螺旋态的寿命强烈的依赖于外禀自旋-轨道耦合强度和杂质密度。 - The trend of the binding energy as a function of impurity position and electron areal density is the same as the result without a magnetic field.
结合能随杂质位置、电子面密度的变化趋势与无磁场时相同。